Infineon Technologies IMBF170R650M1XTMA1
MPNIMBF170R650M1XTMA1
End of Life
SICFET N-CH 1700V 7.4A TO263-7
$6.41352Price · pay online now
PackagingTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
RoHSROHS3 Compliant
SeriesCoolSiC™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolSiC™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1700 V |
| Drive voltage (Max rds on, min rds on) | 12V, 15V |
| Current - continuous drain (Id) @ 25°C | 7.4A (Tc) |
| Power dissipation | 88W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Vgs(th) (Max) @ id | 5.7V @ 1.7mA |
| Rds on (Max) @ id, vgs | 650mOhm @ 1.5A, 15V |
| Gate charge (Qg) (Max) @ vgs | 8 nC @ 12 V |
| Input capacitance (Ciss) (Max) @ vds | 422 pF @ 1000 V |