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IAUC50N08S5L096ATMA1

Infineon Technologies IAUC50N08S5L096ATMA1

MPNIAUC50N08S5L096ATMA1
End of Life

MOSFET_(75V 120V( PG-TDSON-8

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$1.77 / ea

14 in stock — maximum per order · 3–4 days lead time

$1.45 / ea from 10 pcs

Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

IAUC50N08S5L096ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A
Power dissipation60W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 24µA
Rds on (Max) @ id, vgs9.6mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1684 pF @ 40 V