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Cypress Semiconductor Corp CY7C2263XV18-600BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2263XV18-600BZXC 36Mbit QDR II+ SRAM, 600 MHz, 165-FBGA

MPNCY7C2263XV18-600BZXC
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Infineon (Cypress) CY7C2263XV18-600BZXC, 36Mbit synchronous QDR II+ SRAM, 600 MHz, 1.7–1.9 V, 165-FBGA (13×15), 2M × 18, surface mount, 0°C to 70°C.

$110.9200Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY7C2263XV18-600BZXC Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency600 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Synchronous, QDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Frequently asked questions

What does the 1.7–1.9 V supply window mean for my 1.8 V rail design?

The 1.7–1.9 V band is a tight window around a 1.8 V nominal — a standard 1.8 V LDO is usually within spec, but the synchronous clocked nature of QDR II+ means current draw is bursty at the 600 MHz clock frequency. A dedicated local LDO or well-decoupled rail island is the safer board-level choice for noise-sensitive mixed-signal environments; sharing the rail with slower logic may introduce feedthrough on the SRAM switching transients.