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Cypress Semiconductor Corp CY7C1620KV18-300BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1620KV18-300BZC 144Mbit DDR II SRAM, 300MHz, 1.7-1.9V, 165-FBGA

MPNCY7C1620KV18-300BZC
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Cypress (now Infineon) CY7C1620KV18-300BZC is a 144 Mbit synchronous DDR II SRAM organized as 4M by 36 bits, operating at 300 MHz with a 1.7–1.9 V supply in a 165-FBGA (15x17) surface-mount package rated 0°C to 70°C.

$215.4000Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

CY7C1620KV18-300BZC Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage1.7V ~ 1.9V
Frequency300 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageBulk
TechnologySRAM - Synchronous, DDR II
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 36

Frequently asked questions

Can I replace a CY7C1613KV18-333BZXC (8M x 18) with the CY7C1620KV18-300BZC (4M x 36)?

No — the memory organizations differ (8M x 18 vs 4M x 36), meaning address and bank-select pin mappings are not compatible. The same 165-FBGA footprint does not guarantee drop-in swap without board re-route and firmware memory-controller changes.

Does the CY7C1620's 1.7–1.9 V supply work with a legacy 3.3 V memory rail?

A dedicated 1.7–1.9 V LDO or POL regulator is required — 3.3 V level-translation on the DDR II bus introduces skew at 300 MHz that the timing budget may not absorb. Budget a clean, locally regulated 1.7 V rail with adequate PSRR for this device.