Memory density and access profile
The CY62157DV30LL-55BVI is an 8 Mbit asynchronous SRAM organised as 512 K x 16 bits, part of Infineon's MoBL (More Battery Life) series optimised for low standby current in battery-backed or portable applications. With a 55 ns access time and matching 55 ns write cycle (word/page), this part fits 8-bit and 16-bit microcontroller buses that run at sub-18 MHz clock rates without inserting wait states — the bus master reads or writes in a single cycle.
Package and board integration
Housed in a 48-ball VFBGA (6 x 8 mm body), the 0.75 mm ball pitch demands tight via fan-out — a four-layer PCB with microvias or blind vias is the practical route for signal breakout. The parallel memory interface uses a 16-bit data bus plus address lines; routing must match the 55 ns timing budget, keeping trace length skew within a few inches between the controller and the SRAM.
The part is marked RoHS non-compliant, so it falls outside the EU RoHS exemption scope. For RoHS-required BOMs, a lead-free variant from the same MoBL family should be cross-referenced at RFQ.