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Infineon Technologies CY62137CV25LL-55BVI — DC-DC Power Modules

Cypress CY62137CV25LL-55BVI MoBL SRAM, 2Mbit, 55 ns

MPNCY62137CV25LL-55BVI
End of Life

Cypress MoBL® CY62137CV25LL-55BVI, 2Mbit (128K x 16) asynchronous SRAM, 55 ns access time, 2.2 V to 2.7 V supply, parallel interface, -40°C to 85°C, 48-VFBGA (6x8 mm).

$1.47Ref. price · indicative, final on quote
Packaging48-VFBGA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY62137CV25LL-55BVI Technical Specifications
ParameterValue
SeriesMoBL®
Memory typeVolatile
Mounting typeSurface Mount
Voltage2.2V ~ 2.7V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time55 ns
Memory size2Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization128K x 16
Write cycle time - word, page55ns

Product details

2Mbit asynchronous SRAM for low-voltage, industrial-temperature designs

The Cypress CY62137CV25LL-55BVI is a 2Mbit asynchronous SRAM from the MoBL® series, organized as 128K x 16 bits. It operates from a 2.2 V to 2.7 V supply and delivers a 55 ns access time, making it a fit for battery-powered or low-voltage embedded systems that need a fast, volatile data buffer without the complexity of synchronous clocking. The parallel interface is straightforward to connect to any MCU or FPGA with a static memory controller. Rated for -40°C to 85°C, it is suited for industrial control, outdoor telecom, and automotive cabin-domain applications where temperature extremes are routine.

55 ns access time — timing margin at 2.5 V

The 55 ns access time is the cycle-limiting spec for this part. At the nominal 2.5 V rail, the address-to-data valid window is tight enough that a slow memory controller or long PCB trace will eat into margin. The write cycle time is also 55 ns, so back-to-back writes run at the same rate. Compared to a 10 ns part like the CY7C1011DV33-10BVXI, this is a slower, lower-power tier — the trade-off is reduced standby current and a wider operating temperature range at the cost of throughput.

Supply rail and package — fit check before ordering

This SRAM requires a 2.2 V to 2.7 V supply — it will not tolerate a 3.3 V rail. The 48-ball VFBGA (6x8 mm) is a fine-pitch BGA; the board must have a matching land pattern and the reflow profile must follow the JEDEC MSL rating on the bag. The industrial temperature range (-40°C to 85°C) covers most environments outside a climate-controlled lab, but the part is not rated for extended automotive under-hood use (125°C).

Lifecycle and sourcing reality

It is RoHS non-compliant (lead-bearing solder balls), which may restrict its use in regions with strict RoHS enforcement unless an exemption applies. For dual-sourcing or a faster alternative, the CY7C1011DV33-10BVXI is a 10 ns, 3.0 V part in the same 128K x 16 organization — but the supply voltage differs, so a board redesign is needed.

Frequently asked questions

What are the equivalent parts for CY62137CV25LL-55BVI?

No pin-compatible drop-in exists at the same 2.5 V supply.