CY62128EV30LL-45SXI

Infineon Technologies · MoBL® Series

Infineon Technologies MoBL® asynchronous SRAM, CY62128EV30LL-45SXI, 1Mbit (128K x 8), 45 ns access, 2.2-3.6 V, -40 to +85 °C, 32-SOIC, tube.

Infineon Technologies CY62128EV30LL-45SXI
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Technical specifications

CY62128EV30LL-45SXI specifications
Parameter / AttributeSpecification / Value
SeriesMoBL®
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time45 ns
Memory size1Mbit
Memory formatSRAM
Case32-SOIC (0.445\", 11.30mm Width)
Memory organization128K x 8
Write cycle time - word, page45ns

Technical details

45 ns byte-wide SRAM for 8-bit buses

The CY62128EV30LL-45SXI: For an 8-bit MCU or a FIFO buffer running at typical bus speeds, 45 ns sets the read-cycle ceiling — the processor must stretch its wait states if it clocks faster than ~22 MHz on consecutive reads. The industrial temperature grade (-40 to +85 °C) covers factory-floor, outdoor telecom cabinet, and unheated enclosure deployments.

Housed in a 32-SOIC (0.445-inch body width, 11.30 mm), the same footprint used by legacy 128K x 8 SRAMs from multiple vendors. Supplied in tube. The write cycle time matches the read access at 45 ns — byte-wide writes complete in one cycle with no page-mode or burst overhead.

ROHS3 compliant, with no exemption-based restrictions that would block EU or California market entry. The part belongs to the MoBL (Motherboard Battery-Less) series — Infineon's low-power asynchronous SRAM family characterized by reduced standby current.

CY62128EV30LL-45SXI
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