Active production — small-signal N-channel MOSFET
The BSS119L6433: This N-channel MOSFET belongs to the SIPMOS® family and is rated for 100 V drain-source voltage and 0.17 A continuous drain current, placing it in the small-signal switching class for low-power loads.
Gate drive and switching performance
Gate charge is 2.5 nC typical at Vgs = 10 V, which keeps switching losses low at moderate frequencies and allows the gate driver to switch the MOSFET quickly without excessive drive current. Maximum on-resistance is 6 Ohm at 170 mA and 10 V gate drive, providing a low voltage drop for the rated current — suitable for load switches, relay drivers, and signal-level switching where conduction loss matters.
Temperature range and package
Maximum power dissipation is 0.36 W, so the part is intended for low-power switching rather than continuous high-current operation — thermal design should account for this limit in the application. Supplied in bulk (tube or tray) in a surface-mount package, the part is compatible with standard reflow soldering profiles and pick-and-place assembly.