BSC091N03MSCGATMA1 - Infineon Technologies
MPNBSC091N03MSCGATMA1
End of Life
POWER FIELD-EFFECT TRANSISTOR, 1
$0.25Ref. price · indicative, final on quote
Packaging8-PowerTDFN
SeriesSIPMOS®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Ta), 44A (Tc) |
| Power dissipation | 2.5W (Ta), 28W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 9.1mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 15 V |