Infineon OptiMOS N-Channel MOSFET, 25 V drain-source, 100 A continuous drain (Tc), 0.9 mOhm max Rds(on) at 10 V, PG-TDSON-8-7 package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 41A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 96W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 0.9mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 126 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5800 pF @ 12 V |
It handles a 25 V drain-to-source voltage and delivers up to 100 A continuous drain current when the case is held at 25 °C — the 41 A Ta rating is the free-air limit, so plan on a heatsink or PCB copper pour to reach the full capability. The 0.9 mOhm maximum on-resistance at 30 A and 10 V gate drive keeps conduction losses low in synchronous rectification, DC-DC converter output stages, and battery-protection circuits.
ROHS3 compliant, no exemptions needed.
Yes, it is ROHS3 compliant, meaning it meets the latest EU restriction-of-hazardous-substances directive without exemptions.