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BSB056N10NN3GXUMA1 - Infineon Technologies
MPN BSB056N10NN3GXUMA1
End of Life
Spot Stock · 24-48h Dispatch
100% Original Sealed
MOSFET N-CH 100V 9A/83A 2WDSON
In Stock: 25,521 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$4.27 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$4.27
10+ pcs
$3.84
30+ pcs
$3.50
100+ pcs
$3.16
500+ pcs
$2.95
1,000+ pcs
$2.78
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case 3-WDSON
Output / Current 100 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta), 83A (Tc) |
| Power dissipation | 2.8W (Ta), 78W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-WDSON |
| Vgs(th) (Max) @ id | 3.5V @ 100µA |
| Rds on (Max) @ id, vgs | 5.6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 74 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5500 pF @ 50 V |
Series Sibling Variants
Infineon Technologies OptiMOS™ Series Models
Sibling variants, package options, and speed/density grades in this Infineon Technologies semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
2N7002DWH6327XTSA1
Infineon OptiMOS dual N-channel MOSFET, 60V Vdss, 300mA Id, 3 Ohm Rds(on), logic-level gate, PG-SOT363-PO package, Tape & Reel.
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2N7002H6327XTSA2
Infineon OptiMOS N-Channel MOSFET, 60 V drain-source, 300 mA continuous drain, 3 Ohm Rds(on) at 500 mA, SOT-23-3 package, -55°C to 150°C junction temperature.
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AUIRF7749L2TR
MOSFET N-CH 60V 36A DIRECTFET
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BSB028N06NN3GXUMA1
Infineon OptiMOS series, BSB028N06NN3GXUMA1, N-Channel MOSFET, 60V Vdss, 90A continuous drain (Tc), 2.8mOhm Rds(on) at 10V, 143nC gate charge, MG-WDSON-2 CanPAK M package, -40°C to 150°C junction.
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BSB044N08NN3GXUMA1
MOSFET N-CH 80V 18A/90A 2WDSON
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BSB053N03LPG
Infineon OptiMOS™ N-Channel Power MOSFET, BSB053N03LPG, 30 V Vdss, 5.3 mOhm Rds(on) at 10 V, 17 A (Ta), 71 A (Tc), 3-WDSON package, Surface Mount, -40°C to 150°C.
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BSB056N10NN3GXUMA1
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