BSB056N10NN3GXUMA1 - Infineon Technologies
MPNBSB056N10NN3GXUMA1
End of Life
MOSFET N-CH 100V 9A/83A 2WDSON
$4.27Ref. price · indicative, final on quote
Packaging3-WDSON
RoHSROHS3 Compliant
SeriesOptiMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta), 83A (Tc) |
| Power dissipation | 2.8W (Ta), 78W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-WDSON |
| Vgs(th) (Max) @ id | 3.5V @ 100µA |
| Rds on (Max) @ id, vgs | 5.6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 74 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5500 pF @ 50 V |