Infineon Technologies HEXFET® series N-Channel MOSFET, AUIRLS3034-7TRL, 40 V, 240 A, 1.4 mOhm Rds(on) at 10 V, D2PAK surface-mount package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 380.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.011 |
| Status | Active |
| Supply voltage | 40.0 |
| Vgs(Th) (Max) @ id | 2.5 V @ 250µA |
| Switching current | 240.0 |
| Rds on (Max) @ id, vgs | 1.4mOhm @ 200 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 4.5 V |
The AUIRLS3034-7TRL: Total gate charge is 180 nC at 4.5 V Vgs — this is the charge the gate driver must deliver each switching cycle. At a 100 kHz switching frequency the average gate-drive current is 18 mA, well within the capability of a standard driver IC. The ±20 V maximum gate-source rating gives headroom for gate-drive overshoot; the 2.5 V threshold at 250 µA means the device turns on fully with logic-level gate signals above 4.5 V.
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Total gate charge is 180 nC at 4.5 V Vgs.