Automotive N-channel MOSFET with low Rds(on)
The AUIRLR3114ZTRL is an automotive-grade N-channel power MOSFET from Infineon's HEXFET® series, rated for 40 V drain-source and 42 A continuous switching current. Its 4.9 mOhm maximum on-resistance at 42 A and 10 V gate drive keeps conduction losses low in high-current automotive loads like solenoid drivers, DC-DC converters, and motor pre-drive stages. With a junction temperature range of -55°C to 175°C, this part covers under-hood and engine-bay environments where ambient temperatures push above 125°C. The 175°C Tj max provides margin for self-heating in continuous conduction.
Gate charge and switching drive
Total gate charge is 56 nC at 4.5 V Vgs — a figure that tells the gate-driver designer the energy per switching cycle. For a 100 kHz PWM, the average gate-drive current is 5.6 mA, well within the capability of a standard automotive gate-driver IC. The 3.8 nF input capacitance (Ciss) sets the rise-time limit at the driver's peak current.