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AUIRLR2703TRL

Infineon AUIRLR2703TRL N-Channel MOSFET, 30V 20A DPAK

MPNAUIRLR2703TRL
Active

Infineon Technologies HEXFET® series, N-Channel MOSFET, AUIRLR2703TRL, 30 V drain-source, 20 A continuous drain, 45 mOhm Rds(on) at 10 V, DPAK surface-mount package.

$0.84Ref. price · indicative, final on quote
Infineon Technologies AUIRLR2703TRL datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRLR2703TRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Power45.0
Package_typeBulk
Capacitance_uf0.0004
StatusActive
Supply voltage30.0
Vgs(Th) (Max) @ id1 V @ 250µA
Switching current20.0
Rds on (Max) @ id, vgs45mOhm @ 14 A, 10 V
Gate charge (Qg) (Max) @ vgs15 nC @ 4.5 V

Product details

30 V, 20 A N-channel — DPAK for automotive-grade switching

The AUIRLR2703TRL: Total gate charge at 4.5 V is 15 nC, keeping switching losses low in a 100–200 kHz DC-DC converter or low-side load switch.

175 °C junction — engine-bay and high-temp power loops

Power dissipation is rated at 45 W — the DPAK copper pad on the PCB must be sized to keep the junction below 175°C at the target load current. Input capacitance is 400 pF typical (0.0004 µF), which together with the 15 nC gate charge defines the driver sink current needed for a given rise time.

Frequently asked questions

What is the difference between AUIRLR2703TRL and AUIRLR2703?

The AUIRLR2703TRL is the tape-and-reel packaged variant of the base AUIRLR2703 die. Both share the same 30 V, 20 A, 45 mOhm electrical ratings and DPAK footprint; the TRL suffix indicates reel packaging for automated pick-and-place assembly.