Automotive-grade N-channel switch
The AUIRLR024N is an automotive-qualified N-channel MOSFET from Infineon's HEXFET® series, rated for 55 V drain-source breakdown and 17 A continuous switching current. With a maximum on-resistance of 65 mOhm at 10 A gate drive (10 V), conduction losses stay manageable in engine-bay and chassis-ground applications where ambient temperatures push junction temperatures toward the 175 °C ceiling.
Gate drive and switching parametrics
Maximum gate-source voltage is ±16 V, so a 12 V regulated rail is safe; a 15 V unregulated rail with transients above 16 V needs a series gate resistor or a zener clamp to protect the oxide.
Sourcing and compliance reality
The DPAK (TO-252) surface-mount package is widely second-sourced — the footprint is standard across the industry, so a pin-compatible alternative from another HEXFET or competitor family can be cross-referenced at RFQ if single-source risk is a concern. The 45 W power dissipation ceiling sets the thermal budget — in a 70 °C ambient, the junction-to-ambient thermal resistance of the DPAK on a standard copper land limits continuous current well below the 17 A rating; a heatsink or larger copper pour is needed to sustain high current.