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Infineon Technologies AUIRL7766M2TR — Discrete Semiconductors

AUIRL7766M2TR N-Channel MOSFET, 100V 10A, HEXFET, Active

MPNAUIRL7766M2TR
Active

Infineon Technologies HEXFET® series N-Channel MOSFET, AUIRL7766M2TR, 100 V, 10 A switching, 10 mOhm Rds(on) at 31 A, 10 V, Surface Mount, Bulk.

$1.78Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRL7766M2TR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±16 V
Power2.5
Package_typeBulk
Capacitance_uf0.0053
StatusActive
Supply voltage100.0
Vgs(Th) (Max) @ id2.5 V @ 150µA
Switching current10.0
Rds on (Max) @ id, vgs10mOhm @ 31 A, 10 V
Gate charge (Qg) (Max) @ vgs66 nC @ 4.5 V

Product details

100 V N-Channel with low Rds(on) for high-efficiency switching

The AUIRL7766M2TR: The 10 mOhm typical Rds(on) at 31 A, 10 V keeps conduction losses low in high-frequency DC-DC converters and motor-drive output stages. With a junction temperature range of -55 to 175 °C, it suits automotive under-hood and industrial ambient environments where thermal cycling is a given.

Gate drive and switching behaviour

The gate threshold voltage is 2.5 V max at 150 µA drain current, meaning a 5 V logic-level gate drive turns the device fully on without a separate gate driver. The total gate charge is 66 nC at 4.5 V, so the switching losses at moderate frequencies stay manageable — a 100 kHz hard-switched converter draws about 6.6 mA from the gate drive. The maximum gate-source voltage rating is ±16 V, leaving headroom above the typical 10 V drive used to achieve the rated Rds(on).