Device identity and headline ratings
The AUIRL1404ZSTRL is an N-channel power MOSFET from Infineon's HEXFET® series, rated for 40 V drain-source and 160 A continuous drain current. The 3.1 mOhm maximum on-resistance at 75 A and 10 V gate drive means conduction losses stay low in high-current paths like battery isolation, motor pre-charge circuits, or synchronous rectification stages.
The 3.1 mOhm Rds(on) at 75 A, 10 V is the figure that governs thermal design at full load. At 160 A the conduction loss is I²R, so the junction temperature rise above ambient is the limiting factor, not the bare current rating. The 200 W power dissipation ceiling sets the maximum steady-state heat the D2PAK can sink into the board copper. Gate charge is 110 nC at 5 V. That total Qg determines the gate-driver current needed for a target switching frequency. A 110 nC gate charged in 100 ns requires a 1.1 A peak drive, well within a standard MOSFET driver's capability, but the trace inductance between the driver and the D2PAK gate pin must be kept short to avoid ringing. The Vgs absolute maximum is ±16 V. Driving the gate above this voltage, even momentarily, risks oxide rupture. This is the full automotive-grade temperature window. In an under-hood or engine-bay environment where ambient hits 105°C, the 175°C Tj max leaves 70°C of headroom for self-heating at the design current.