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Infineon Technologies AUIRL1404ZL — Discrete Semiconductors

Infineon AUIRL1404ZL N-Channel MOSFET, 40V 160A TO-262

MPNAUIRL1404ZL
Active

Infineon Technologies HEXFET® N-Channel MOSFET, AUIRL1404ZL, 40 V, 160 A switching current, 3.1 mOhm Rds(on) at 75 A, 10 V, TO-262 through-hole, Bulk.

$1.52Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRL1404ZL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±16 V
Power200.0
Package_typeBulk
Capacitance_uf0.0051
StatusActive
Supply voltage40.0
Vgs(Th) (Max) @ id2.7 V @ 250µA
Switching current160.0
Rds on (Max) @ id, vgs3.1mOhm @ 75 A, 10 V
Gate charge (Qg) (Max) @ vgs110 nC @ 5 V

Product details

175 °C junction — the thermal margin for motor-drive and battery-switch duty

Rated for a junction temperature range of -55 °C to 175 °C, the AUIRL1404ZL carries the thermal headroom needed for engine-bay or industrial-enclosure environments where ambient temps push past 85 °C — the 175 °C TJ ceiling means the Rds(on) derating curve stays within usable bounds even under sustained high-current load. The 110 nC total gate charge at 5 V Vgs determines the gate-driver current requirement: at a 20 kHz switching frequency, the average gate-drive current is 2.2 mA — well within the output capability of a standard MOSFET driver IC, but the peak current during the Miller plateau still needs a driver capable of sourcing that charge in the switching interval.

TO-262 through-hole — the package story for a 200 W dissipation part

Through-hole mounting means the part is suited for designs where vibration resistance and mechanical retention matter — the leads are soldered into plated through-holes, not surface-mounted, so the joint is less prone to crack under thermal cycling in high-current power stages.

Frequently asked questions

What is the Rds(on) of the AUIRL1404ZL and at what test condition?

The maximum Rds(on) is 3.1 mOhm, specified at Id = 75 A and Vgs = 10 V — this is the conduction loss floor for the BOM at the rated gate drive.