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Infineon Technologies AUIRFU4292 — Discrete Semiconductors

AUIRFU4292 Infineon N-Channel MOSFET, 100 W, ±20 Vgs

MPNAUIRFU4292
Active

Infineon Technologies HEXFET® N-Channel MOSFET, AUIRFU4292, 100 W, 9.3 A switching, 345 mOhm Rds(on), Through Hole, Bulk.

$0.73Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFU4292 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power100.0
Package_typeBulk
Capacitance_uf0.0007
StatusActive
Supply voltage250.0
Vgs(Th) (Max) @ id5 V @ 50µA
Switching current9.3
Rds on (Max) @ id, vgs345mOhm @ 5.6 A, 10 V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V

Product details

The AUIRFU4292: With a switching current of 9.3 A and a gate charge of 20 nC at 10 V, the part switches cleanly without a heavy gate-driver load — the 20 nC Qg means the driver only needs to source a few hundred mA for a few tens of nanoseconds to turn it on fully.

Gate threshold and voltage limits for reliable turn-on

The gate threshold voltage is 5 V maximum at 50 µA drain current, so a 10 V gate drive (as used for the Rds(on) spec) gives plenty of overdrive to keep the FET in the linear region under load. The ±20 V Vgs rating means the gate can handle transients without zener clamping — useful in a noisy 12 V or 24 V automotive rail where inductive kickback is common. The through-hole package (likely TO-251 or similar) makes it a field-swappable part — no hot-air station needed, just a soldering iron and a steady hand. The bulk packaging means it ships loose, not taped, so it is easy to pull one for a prototype or a quick repair.

Frequently asked questions

What is the Rds(on) of AUIRFU4292 and at what test conditions?

The maximum on-resistance is 345 mOhm at a drain current of 5.6 A with a 10 V gate drive. This is the figure to use for conduction-loss calculations in a switching application.