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Infineon Technologies AUIRFU1010Z — Discrete Semiconductors

Infineon AUIRFU1010Z N-Channel MOSFET, 55V 42A TO-251

MPNAUIRFU1010Z
Active

Infineon Technologies AUIRFU1010Z N-Channel MOSFET, 55 V, 42 A, 7.5 mOhm Rds(on), TO-251 (IPAK), Through Hole, Bulk.

$0.81Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFU1010Z specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power140.0
Package_typeBulk
Capacitance_uf0.0028
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 100µA
Switching current42.0
Rds on (Max) @ id, vgs7.5mOhm @ 42 A, 10 V
Gate charge (Qg) (Max) @ vgs95 nC @ 10 V

Product details

Device identity and key power-switch ratings

The AUIRFU1010Z is an N-channel power MOSFET from Infineon, rated for 55 V drain-source voltage and 42 A continuous drain current — a through-hole TO-251 (IPAK) part suited for medium-current switching in automotive and industrial power trains. Total gate charge is 95 nC at 10 Vgs — the gate-driver must source this charge each switching cycle, so the switching frequency is limited by the driver's peak current and the gate-loop inductance.

Thermal and voltage endurance

Maximum power dissipation is 140 W — the actual continuous dissipation in a real board depends on the copper pad area under the TO-251 tab and the airflow across the leads. Gate-source voltage is limited to ±20 V absolute maximum; the gate drive should clamp transients below this to avoid oxide rupture.

Frequently asked questions

What is AUIRFU1010Z's listed Vgs and power dissipation?

The maximum gate-source voltage is ±20 V, and the maximum power dissipation is 140 W. Both are absolute maximum ratings; derate for operating temperature and duty cycle.