What the 185 mOhm Rds(on) means for your BOM
The AUIRFSL6535 is an N-channel power MOSFET from Infineon's Automotive HEXFET® series, rated 300 V drain-source and 19 A continuous drain current in the TO262-3-901 through-hole package. At 11 A the dissipation hits about 22 W, well within the 210 W package capability, but the junction-to-case thermal path still needs a heatsink for sustained operation above a few amps.
Gate charge and switching drive
Total gate charge Qg is 57 nC maximum at Vgs = 10 V. That is modest — a typical gate driver with 1 A peak output can switch the FET in under 100 ns, but the 57 nC figure also tells you the gate drive current needed at a given frequency: at 100 kHz switching, the average gate drive current is about 5.7 mA, plus the miller plateau charge. The ±20 V gate-source rating gives headroom for ringing on long gate traces, but the 5 V threshold at 150 µA means the device is fully enhanced by 10 V logic, not 5 V — confirm your gate drive voltage is above 10 V to hit the rated Rds(on).