D2PAK power MOSFET for high-current switching
The AUIRFS8405 is an N-channel HEXFET power MOSFET in a D2PAK (TO-263) surface-mount package, rated 40 V drain-source and 120 A continuous drain current. The 2.3 mOhm maximum on-resistance at 100 A, 10 V gate drive keeps conduction losses low in high-current paths like motor drives, battery management, and DC-DC converters.
Gate charge and switching drive
Total gate charge is 161 nC at Vgs = 10 V. For a 100 kHz switching frequency, the average gate-drive current is Qg × f = 161 nC × 100 kHz = 16.1 mA, well within the capability of a standard gate-driver IC. The ±20 V gate-source rating gives headroom for drive overshoot in noisy environments.
Temperature range and thermal management
The 163 W maximum power dissipation assumes the D2PAK's exposed pad is soldered to a sufficient copper area on the PCB — the board's thermal stack-up, not the package alone, sets the real dissipation limit.