75 V, 80 A switching in a D2PAK
The AUIRFS3607 is an N-Channel HEXFET power MOSFET rated for 75 V drain-source and 80 A continuous switching current.
Gate charge and switching drive
Total gate charge is 84 nC at 10 V — the driver must source this charge per switching cycle. The ±20 V Vgs max gives margin for gate ringing in hard-switched topologies.
Thermal and package notes for the bench
D2PAK (TO-263) surface-mount package — the exposed drain paddle is the primary thermal path. Rated junction temperature from -55°C to 175°C. The 140 W power dissipation assumes the paddle is soldered to a sufficient copper area on the PCB. Reflow profile follows standard lead-free solder profiles; the bulk package is moisture-sensitive, so bake before rework if the floor life has been exceeded.