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Infineon Technologies AUIRFR5505TRL — Discrete Semiconductors

AUIRFR5505TRL P-Channel MOSFET, 55V 18A DPAK

MPNAUIRFR5505TRL
Active

Infineon HEXFET® P-Channel MOSFET, AUIRFR5505TRL, 55 V, 18 A, 110 mOhm, DPAK surface-mount, -55 to 150 °C.

$0.79Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFR5505TRL specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±20 V
Power57.0
Package_typeBulk
Capacitance_uf0.0006
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current18.0
Rds on (Max) @ id, vgs110mOhm @ 9.6 A, 10 V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V

Product details

What the DPAK package and P-channel polarity mean on the bench

The AUIRFR5505TRL: The DPAK footprint is a common power-semiconductor package that demands a copper pad on the PCB for thermal dissipation — the 57 W power rating assumes that pad is present and sized per the datasheet layout. P-channel means the load connects between drain and ground, and the gate is pulled low to turn the FET on — useful for high-side switching where you want to avoid a charge-pump gate driver.

On-resistance and the switching current that matters

The maximum on-resistance is 110 mOhm at Vgs = -10 V and Id = 9.6 A — that is the operating point the datasheet guarantees, not the 18 A peak. At 18 A the die will be dissipating well over 35 W even at the Rds(on) floor, so the 57 W package limit means the duty cycle and heatsinking must be checked against the actual load current. Gate charge is 32 nC at Vgs = -10 V — a typical gate driver with 1 A peak output can switch this FET in under 50 ns, but the total switching loss depends on the gate-drive loop inductance as much as the Qg.

Temperature range and where this part survives

Junction temperature range is -55 °C to 150 °C, which covers automotive under-hood and industrial motor-drive environments — the threshold voltage shifts with temperature, so the 4 V max at 250 µA is the cold-start worst case. The gate-source voltage is limited to ±20 V absolute maximum — a gate driver with a 12 V supply is safe, but any ringing above that on the gate node will punch through the oxide.