P-Channel 100 V MOSFET in the DPAK footprint
The AUIRFR5410-IR is an automotive-grade P-Channel enhancement-mode MOSFET from the HEXFET® series, rated for 100 V drain-source breakdown and 13 A continuous switching current. Packaged in the DPAK (TO-252AA) surface-mount outline, the part suits automated reflow assembly on standard FR-4 boards. The bulk packaging option means it ships in tubes or trays rather than tape-and-reel — confirm the feeder compatibility if your line expects reeled parts.
Gate drive and switching parameters for the BOM
Gate threshold voltage is specified at 4 V maximum with 250 µA drain current — a logic-level gate drive at 5 V will barely turn the device on; plan for a 10 V gate rail to achieve the rated Rds(on). Maximum gate-source voltage is ±20 V, so the driver output should be clamped or the supply rail kept below that limit to avoid oxide rupture. The 66 W power dissipation ceiling assumes the DPAK is soldered to a reasonable copper area on the PCB — a layout with minimal drain pad copper will derate that figure significantly. The 800 pF (0.0008 µF) input capacitance is a figure from the datasheet's typical curve — it influences the switching speed and the driver's peak current requirement.