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AUIRFR4104

AUIRFR4104 N-Channel MOSFET, 40V, 42A, HEXFET

MPNAUIRFR4104
Active

Infineon AUIRFR4104 automotive N-channel HEXFET MOSFET, 40 V, 42 A, 5.5 mOhm Rds(on), D-Pak (TO-252AA) surface mount, -55 to +175 °C junction.

$1.04Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFR4104 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power140.0
Package_typeBulk
Capacitance_uf0.0029
StatusActive
Supply voltage40.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current42.0
Rds on (Max) @ id, vgs5.5mOhm @ 42 A, 10 V
Gate charge (Qg) (Max) @ vgs89 nC @ 10 V

Product details

Automotive power switching with the AUIRFR4104

The AUIRFR4104 is an automotive-grade N-channel HEXFET MOSFET rated for 40 V drain-source and 42 A continuous switching current. The 175 °C maximum junction temperature gives headroom above the 125 °C under-hood ambient — the die can absorb transient thermal spikes from stalled motor starts or short-circuit events without immediate derating.

The ±20 V Vgs absolute maximum means the gate can tolerate 12 V battery transients and 24 V nominal rails without external clamping — but a 15 V zener across gate-source is still good practice for inductive-load flyback events.

Package and board integration

Surface-mount D-Pak (TO-252AA) package, supplied in bulk tube. The exposed drain pad on the bottom requires a copper land and thermal vias to the PCB ground plane — the 140 W power dissipation rating assumes the pad is soldered to a 1-inch-square copper area on a 2 oz board.