300 V, 38 A N-Channel HEXFET in TO-247AC
The AUIRFP4409: Maximum on-resistance is 69 mOhm at Vgs = 10 V and Id = 24 A, a figure that defines conduction losses in high-current switching stages. Total gate charge at Vgs = 10 V is 125 nC, setting the drive current needed from the gate driver for a given switching frequency — a 125 nC gate at 100 kHz draws 12.5 mA average from the driver.
Thermal and voltage margins for the BOM
Maximum gate-source voltage is ±20 V — exceeding this during fast switching transients can rupture the gate oxide; a gate clamp or zener across Vgs is standard practice in noisy layouts.
Active production — sourcing posture
Sourced through authorized and independent distribution channels; lead time and per-unit pricing are confirmed at RFQ against the BOM quantity.