40 V, 195 A N-channel HEXFET — the Rds(on) drives the fit
The AUIRFP4004 is an N-channel HEXFET power MOSFET in the TO-247AC through-hole package, rated for 40 V drain-source and 195 A continuous drain current. The headline spec is the 1.7 mOhm maximum on-resistance at Vgs = 10 V and Id = 195 A — this is the conduction loss figure that governs the thermal budget in a high-current switching circuit. With a gate charge of 330 nC at Vgs = 10 V, the driver must supply enough peak current to switch the gate capacitance within the target dead-time. The 380 W power dissipation rating and the -55°C to 175°C junction temperature range suit it for industrial and automotive power stages where the ambient is high and the load cycles hard.
Parametric profile for the switching stage
The 330 nC total gate charge sets the drive current needed: at 100 kHz switching frequency, the average gate drive current is 33 mA, but the peak current from the driver must be higher to charge the gate in the desired rise time. The ±20 V maximum gate-source voltage means the gate drive must be clamped; a 12 V or 15 V gate drive is standard, but any transient above 20 V risks oxide rupture.