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Infineon Technologies AUIRFP1405 — Discrete Semiconductors

AUIRFP1405 N-Channel MOSFET, 55V, 95A, HEXFET, TO-247

MPNAUIRFP1405
Active

Infineon HEXFET® N-Channel MOSFET, AUIRFP1405, 55 V, 95 A switching current, 5.3 mOhm Rds(on), TO-247, Through Hole, Bulk.

$2.38Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFP1405 specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power310.0
Package_typeBulk
Capacitance_uf0.0056
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current95.0
Rds on (Max) @ id, vgs5.3mOhm @ 95 A, 10 V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V

Product details

What the 5.3 mOhm Rds(on) means at the bench

The AUIRFP1405 is an N-channel HEXFET MOSFET in a TO-247 through-hole package, rated for 55 V drain-source and 95 A switching current. The headline figure is the 5.3 mOhm maximum on-resistance at 95 A with 10 V gate drive — that is the conduction loss you pay for in heat every cycle. At full rated current, the dissipation in the channel alone is about 48 W before you account for switching losses, so the 310 W package power rating gives you breathing room for a hard-switched inverter leg.

The ±20 V absolute maximum gate-source rating gives margin for ringing on long gate traces, but a 15 V zener clamp across the gate-source is cheap insurance in a noisy environment.

Temperature grade and where it fits

The junction temperature range is -55°C to 175°C, which is the full automotive-grade band. This part carries the AUTOMOTIVE HEXFET designation — it is qualified for the under-hood thermal cycle and vibration profile. The TO-247 package with through-hole mounting handles the mechanical stress of engine-bay duty better than a surface-mount D²PAK in many cases, and the large backside tab makes heatsinking straightforward with a single M3 screw and thermal compound.

Frequently asked questions

What gate voltage should I use to achieve the rated Rds(on)?

The 5.3 mOhm Rds(on) is specified at Vgs = 10 V with 95 A drain current. A 12 V or 15 V gate drive rail is recommended to ensure the MOSFET is fully enhanced and stays in the low-resistance region across the operating temperature range.