55 V, 110 A, 8 mOhm — the switching decision
The AUIRFP064N: This is an N-channel HEXFET rated for 55 V drain-source and 110 A switching current. The 8 mOhm maximum Rds(on) at 59 A and 10 V gate drive means conduction losses stay low even at high current — the on-resistance figure is what governs the thermal rise in a continuous-duty switching application like a motor drive or DC-DC converter. Gate charge is 170 nC at 10 V. That tells the drive circuit designer how much current the gate driver must source to hit the target switching frequency — a 170 nC gate at 50 kHz draws about 8.5 mA from the driver, well within a standard totem-pole driver's capability.
Junction temperature range and package
The part can sit in an engine bay or an outdoor enclosure without derating the junction temperature below the datasheet ceiling. Through-hole mounting in a TO-247 package. The bulk package means it ships in tubes or trays, not tape-and-reel — a factor for pick-and-place throughput if the line expects reel-fed parts. 200 W power dissipation is the thermal budget at case temperature 25°C. In practice, the actual dissipation is limited by the heatsink and airflow — the junction-to-case thermal resistance is the number to size the heatsink against.
Gate drive limits and threshold
Maximum gate-source voltage is ±20 V. The ±20 V rating gives margin above the typical 12 V drive rail.