Device identity and key parametrics
The AUIRFB4610 is an automotive-grade N-channel HEXFET MOSFET in a through-hole TO-220 package, rated for 100V drain-source breakdown and 73A continuous switching current. On-resistance is 14mOhm maximum at 44A drain current with 10V gate drive — this is the conduction loss figure for a motor-drive or battery-charger output stage at full load.
Junction temperature range spans -55°C to 175°C, covering the full automotive under-hood and engine-bay thermal profile with margin above the 150°C typical ambient limit. Maximum gate-source voltage is ±20V, giving headroom above the 12V or 15V gate drive rails common in automotive power stages — oxide stress from overshoot on a 48V mild-hybrid bus stays within the abs-max window. Power dissipation is rated 190W — this is the package-limited figure at 25°C case temperature; actual usable power drops with the junction-to-case thermal resistance and the ambient derating.