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Infineon Technologies AUIRF9Z34N — Discrete Semiconductors

AUIRF9Z34N P-Channel MOSFET, AEC-Q101, 55V, 19A

MPNAUIRF9Z34N
Active

International Rectifier AUIRF9Z34N, P-Channel HEXFET power MOSFET, 55 V, 19 A, 100 mOhm, TO-220AB, AEC-Q101, Through Hole.

$0.71Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRF9Z34N specifications
ParameterValue
SeriesAutomotive, AEC-Q101, HEXFET®
FET typeP-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power68.0
Package_typeBulk
Capacitance_uf0.0006
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current19.0
Rds on (Max) @ id, vgs100mOhm @ 10 A, 10 V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V

Product details

P-channel load switching in 12V and 24V automotive systems

The AUIRF9Z34N is a P-Channel HEXFET power MOSFET rated for 55 V drain-source breakdown and 19 A continuous drain current, housed in a TO-220AB through-hole package.

On-resistance and gate drive budget

Maximum on-resistance is 100 mOhm at Vgs = -10 V and Id = 10 A — the conduction loss at 10 A is 10 W, which must be dissipated within the 68 W package limit and the junction temperature derating. Total gate charge is 35 nC at Vgs = -10 V, so a gate driver sourcing 1 A can switch the FET in approximately 35 ns, ignoring the driver's own rise time and the gate-loop inductance.

Active production and sourcing posture

Sourced through authorized and independent distribution channels; pricing and lead time are confirmed at quote against the BOM quantity.