P-channel load switching in 12V and 24V automotive systems
The AUIRF9Z34N is a P-Channel HEXFET power MOSFET rated for 55 V drain-source breakdown and 19 A continuous drain current, housed in a TO-220AB through-hole package.
On-resistance and gate drive budget
Maximum on-resistance is 100 mOhm at Vgs = -10 V and Id = 10 A — the conduction loss at 10 A is 10 W, which must be dissipated within the 68 W package limit and the junction temperature derating. Total gate charge is 35 nC at Vgs = -10 V, so a gate driver sourcing 1 A can switch the FET in approximately 35 ns, ignoring the driver's own rise time and the gate-loop inductance.
Active production and sourcing posture
Sourced through authorized and independent distribution channels; pricing and lead time are confirmed at quote against the BOM quantity.