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AUIRF1324S

AUIRF1324S N-Channel MOSFET, 24V 195A D2PAK, 1.65mOhm

MPNAUIRF1324S
Active

Infineon HEXFET® N-Channel MOSFET, AUIRF1324S, 24 V, 195 A switching current, 1.65 mOhm Rds(on) max, D2PAK surface-mount package, bulk.

$1.92Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRF1324S specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power300.0
Package_typeBulk
Capacitance_uf0.0076
StatusActive
Supply voltage24.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current195.0
Rds on (Max) @ id, vgs1.65mOhm @ 195 A, 10 V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V

Product details

D2PAK footprint and thermal story

The AUIRF1324S comes in a D2PAK (TO-263) surface-mount package.

Conduction loss at 195 A switching current

Rated 1.65 mOhm maximum on-resistance at Vgs = 10 V and Id = 195 A — that is the conduction loss figure a designer uses to size the heatsinking and PCB copper. At 195 A the dissipation in the channel alone is about 63 W, which the D2PAK must shed into the board's thermal vias and backside copper pour. Gate charge is 240 nC at Vgs = 10 V. For a switching regulator running at 100 kHz, the average gate-drive current is 24 mA — well within a standard gate-driver IC's output capability, but the driver's peak current must be high enough to charge that 240 nC within the desired switching transition time.

Active production — no obsolescence watch needed

The junction temperature range spans -55°C to 175°C. That covers automotive under-hood environments where ambient under the bonnet can exceed 125°C, as well as industrial motor-drive enclosures with high internal thermal rise.

Frequently asked questions

What is AUIRF1324S's Rds(on) and at what gate voltage is it specified?

The maximum on-resistance is 1.65 mOhm, measured at Id = 195 A and Vgs = 10 V. This is the figure used for conduction-loss calculations in the target switching application.