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AUIRF1018ES

AUIRF1018ES N-Channel MOSFET, 8.4 mOhm, 60 V, Active

MPNAUIRF1018ES
Active

Infineon HEXFET® AUIRF1018ES N-Channel MOSFET, 60 V, 79 A, 8.4 mOhm Rds(on) at 10 V, D2PAK, Surface Mount, Bulk.

$1.17Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRF1018ES specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power110.0
Package_typeBulk
Capacitance_uf0.0023
StatusActive
Supply voltage60.0
Vgs(Th) (Max) @ id4 V @ 100µA
Switching current79.0
Rds on (Max) @ id, vgs8.4mOhm @ 47 A, 10 V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V

Product details

60 V, 8.4 mOhm automotive N-channel — conduction loss floor for high-current switching

The AUIRF1018ES: That Rds(on) figure sets the conduction loss at a given load current — at 47 A the dissipation is roughly 18.5 W, well within the 110 W package limit, so the part runs cool in a motor-drive or DC-DC converter stage without oversized heatsinking. The gate charge is 69 nC at 10 V, which dictates the drive current needed for a target switching frequency. A 100 kHz PWM with a 10 V gate swing draws about 6.9 mA from the gate driver — a standard automotive gate-driver IC handles that without thermal stress.

Automotive temperature grade and AEC-Q101 qualification

Junction temperature range is -55°C to 175°C, the full automotive Grade 1 band. An engine-bay ECU that sees 105°C ambient on a summer day still has 70°C of margin before the die reaches its rated maximum, so the part can handle transient overloads during cold-crank or load-dump without immediate derating.

Surface-mount D2PAK — board-level integration

The AUIRF1018ES comes in a surface-mount package (D2PAK) supplied in bulk. A 1 in² copper pour on a 2 oz board keeps the junction below 125°C at 47 A continuous.

Frequently asked questions

Is AUIRF1018ES equivalent to IRF1018E?

The IRF1018E is a known pin-compatible alternate from the same HEXFET family. Both are 60 V N-channel MOSFETs with similar Rds(on) and gate charge — confirm the specific BOM position's thermal and switching requirements before substituting.