55 V, 75 A N-channel — the Rds(on) drives the thermal budget
The AUIRF1010Z is an N-channel HEXFET power MOSFET in a TO-220AB through-hole package, rated 55 V drain-source and 75 A continuous drain current.
140 W dissipation ceiling and 175 °C junction
Maximum power dissipation is 140 W, with the junction temperature range from -55 °C to 175 °C. The wide temperature grade suits applications where the MOSFET sits near a hot power supply or in an enclosure with limited airflow — the 175 °C TJ(max) gives headroom above the typical 150 °C limit of many automotive-grade parts. Gate charge is 95 nC at 10 V — this tells the gate-driver designer the total charge needed per switching cycle.