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Infineon Technologies AIGB30N65H5ATMA1 — Discrete Semiconductors

Infineon AIGB30N65H5ATMA1 IGBT, 650 V 30 A NPT, D²Pak

MPNAIGB30N65H5ATMA1
End of Life

Infineon AIGB30N65H5ATMA1 NPT IGBT, 650 V, 30 A, surface-mount D²Pak (TO-263-3), ROHS3 compliant, active lifecycle.

$4.31Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AIGB30N65H5ATMA1 specifications
ParameterValue
IGBT typeNPT
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown650 V
Current - collector (Ic)30 A
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product details

The Infineon AIGB30N65H5ATMA1 is a non-punch-through (NPT) IGBT rated for 650 V collector-emitter breakdown and 30 A continuous collector current, housed in a surface-mount PG-TO263-3-2 (D²Pak) package. NPT IGBTs offer robust short-circuit capability and a positive temperature coefficient, making them straightforward to parallel in higher-current designs.

The tab is the collector terminal. For continuous 30 A operation, the PCB copper area and any added heatsink determine the junction temperature — the package alone cannot dissipate that current's losses without a thermal path.

Frequently asked questions

What is the maximum collector current of AIGB30N65H5ATMA1?

The maximum continuous collector current (Ic) is 30 A.

Is AIGB30N65H5ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What is the recommended replacement for AIGB30N65H5ATMA1?

The part remains active, so no substitution is currently required.