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Infineon Technologies 2N7002L6327HTSA1 — Discrete Semiconductors

2N7002L6327HTSA1 Infineon N-Channel MOSFET, 60V, 300mA

MPN2N7002L6327HTSA1
Obsolete

Infineon OptiMOS™ 2N7002L6327HTSA1 N-Channel MOSFET, 60 V drain-source, 300 mA continuous drain, 3 Ohm max on-resistance at 10 V gate drive, in PG-SOT23-PO surface-mount package.

$0.3800Ref. price · indicative, final on quote
Infineon Technologies 2N7002L6327HTSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N7002L6327HTSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20 pF @ 25 V

Product details

The Infineon 2N7002L6327HTSA1 is an N-Channel enhancement-mode MOSFET from the OptiMOS™ series, built with a standard metal-oxide semiconductor process. The device comes in a PG-SOT23-PO package (SOT-23-3 footprint), making it a drop-in fit for small-signal switching, level shifting, and load-switching roles in low-power circuits across industrial and consumer electronics.

The low gate charge of 0.6 nC at 10 V keeps switching losses minimal in high-frequency PWM or logic-level gate drive circuits.

Infineon lists the 2N7002L6327HTSA1 as obsolete.

Frequently asked questions

What is the replacement for 2N7002L6327HTSA1?

No official replacement order code is listed by Infineon. For a pin-compatible alternative in the same SOT-23-3 footprint, a standard 2N7002 variant from another manufacturer (e.g., NXP, ON Semiconductor) with matching 60 V / 300 mA ratings may work, but verify the gate threshold and on-resistance against your design. We can help cross-reference on request.

What are the exact specifications of 2N7002L6327HTSA1?

Key specifications: N-Channel MOSFET, Vdss 60 V, Id 300 mA at 25°C, Rds(on) 3 ohm max at 500 mA and 10 V, Vgs(th) 2.5 V max at 250 µA, gate charge 0.6 nC at 10 V, input capacitance 20 pF at 25 V, power dissipation 500 mW, operating temperature -55°C to 150°C, package PG-SOT23-PO (SOT-23-3).