Half-bridge gate driver for IGBT and N-channel MOSFETs
The 2ED21834S06JXUMA1 is a single-channel half-bridge gate driver from Infineon, designed to drive IGBTs and N-channel MOSFETs in synchronous or bootstrap-fed topologies. Its 650 V high-side bootstrap rating lets it float the high-side gate drive above a DC bus rail, making it a fit for motor-drive inverter stages, UPS half-bridges, and DC-DC converter power stages where the low-side and high-side switches share a common output node.
2.5 A peak drive with 15 ns edges
Peak output current is rated 2.5 A source and 2.5 A sink, with typical rise and fall times of 15 ns into a capacitive load. That edge rate keeps switching losses in the external FETs or IGBTs under control at moderate frequencies, but the gate resistor still sets the actual di/dt and dv/dt — the driver's raw speed means the layout loop from the driver output to the gate and back to the source Kelvin must stay tight to avoid ringing. Supply voltage range is 10 V to 20 V, covering the standard 12 V and 15 V gate-drive rails used for most IGBTs and power MOSFETs. A motor drive in a non-conditioned enclosure or a power supply in an outdoor telecom cabinet stays within the rated junction range across the seasonal extremes.
14-SOIC package and surface-mount integration
Housed in a 14-SOIC narrow-body package (3.90 mm body width, 0.154" pitch), the PG-DSO-14-49 footprint is a standard SOIC-14 land pattern. The exposed paddle is not present — thermal management relies on the copper plane and via array under the package on the PCB. Tape-and-reel and cut-tape options are available for both production reflow and prototype builds. The driver is non-inverting and synchronous-channel configured: the single input pin controls both the high-side and low-side outputs with built-in dead-time. The bootstrap diode is integrated, so only an external bootstrap capacitor is needed for the high-side supply.