The Infineon 2ED2101S06FXUMA1 is a high-side and low-side gate driver built on SOI (silicon-on-insulator) level-shift technology, rated for bootstrap voltages up to 650 V. It drives one IGBT or N-channel MOSFET on the high side and one on the low side, with independent channel control. The 290 mA source / 700 mA sink peak output current is sized for medium-power half-bridge stages in motor drives, switched-mode power supplies, and PFC converters. The 10 V to 20 V supply range covers standard bias rails for industrial and automotive gate-drive circuits.
Rise and fall time — switching loss and dead-time budget
The asymmetric fall (faster turn-off) helps reduce the dead-time window needed between high-side and low-side transitions. For designs pushing above 100 kHz switching, the 70 ns rise may start to dominate the switching loss — budget the gate resistor accordingly.
The SOI level-shift architecture gives robust dv/dt immunity on the high-side floating supply, a common failure point in noisy inverter stages.
The surface-mount package is compatible with reflow soldering; MSL level is not stated in this listing, so verify the moisture sensitivity level on the Infineon packing label before reflow.
The logic input thresholds are specified at 1.1 V (VIL) and 1.7 V (VIH), making the driver directly compatible with both 5 V and 3.3 V logic families. A 3.3 V microcontroller output driving a 1.7 V VIH threshold has about 1.6 V of noise margin; a 5 V logic output has even more. No external level-shifting is needed for the PWM inputs from a typical MCU or DSP.
No direct second-source alternate is listed in the Infineon cross-reference, but the IRS2005STRPBF from Infineon (formerly International Rectifier) is a functional peer with similar 10 V supply, 290 mA peak output, and 8-SOIC package — verify pin compatibility and bootstrap rating for your specific layout before substituting.