Low-side gate driver for N-channel MOSFETs
The Infineon 1ED44173N01BXTSA1 is a single-channel, low-side gate driver built for switching N-channel MOSFETs. It delivers a peak output of 2.6 A for both source and sink, which means it can charge and discharge the gate capacitance of a medium-power MOSFET fast enough to keep switching losses in check — think 5 ns typical rise and fall times into a moderate load. Supply range runs from 8.6 V to 20 V, covering the common 12 V bias rail used in industrial and telecom power stages.
Switching speed and thermal range
With 5 ns typical rise and fall times, this driver is fast enough for switching frequencies well into the hundreds of kilohertz — the actual limit depends on the total gate charge of the external MOSFET and the drive current available. The 2.6 A peak output handles the initial gate charge spike without sagging the bias rail. The SOT-23-6 package (PG-SOT23-6-3) keeps the PCB footprint small — useful when the driver sits close to the MOSFET to minimize gate-loop inductance.
Active production and compliance
It is ROHS3 compliant, so it meets the current restriction on hazardous substances for European and most global markets.