14 A peak output for fast-switching power stages
The 1ED3124MU12FXUMA1 is a single-channel isolated gate driver from the Infineon EiceDriver™ series, delivering 14 A peak output current with 6 A source and 6 A sink capability. That peak current drives the gate charge of large IGBT modules or parallel SiC MOSFETs in a single switching event — the 30 ns typical rise and fall times keep switching losses low even with high capacitive loads. Magnetic coupling technology provides 3000 Vrms galvanic isolation between the input logic and output power stage. The 200 kV/µs minimum common-mode transient immunity means this driver holds its output state through the fast voltage slewing on the switching node of a hard-switched inverter — a spec that matters when driving SiC or GaN devices switching at 50+ V/ns.
Supply range and temperature grade for industrial drives
Output supply voltage spans 10 V to 35 V, covering the standard gate drive rails for IGBTs (15 V) and SiC MOSFETs (18-20 V). The -40°C to 150°C operating temperature range suits the thermal environment inside a motor drive enclosure or a power module baseplate — the junction can reach 150°C under full-load fault conditions without derating the isolation barrier. Pulse-width distortion is held to 5 ns maximum, which preserves the duty-cycle accuracy of the PWM signal from the controller through to the gate. In a 100 kHz switching application, a 5 ns distortion represents 0.05% of the period — negligible for most motor-drive and power-supply loops.
Active production, ROHS3, and UL recognized
Packaged in an 8-pin SOIC with 3.90 mm body width, supplier device package PG-DSO-8. Supplied in tape and reel or cut tape options for surface-mount assembly. No external bootstrap diode is required — this is a single-channel driver for the high-side or low-side position, not a half-bridge configuration.