Goford Semiconductor GT52N10T
MPNGT52N10T
Active
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
$1.73Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Current - continuous drain (Id) @ 25°C | 80A |
| Power dissipation | 227W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2626 pF @ 50 V |