Goford Semiconductor GT110N06D5
MPNGT110N06D5
Active
N60V, 45A,RD<11M@10V,VTH1.0V~2.4
$0.91Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesGT
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | GT |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Tc) |
| Power dissipation | 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 14A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1202 pF @ 30 V |