Skip to main content
Goford Semiconductor GT105N10F — Logic ICs

Goford Semiconductor GT105N10F

MPNGT105N10F
Active

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

$1.28Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

GT105N10F Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation20.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs10.5mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V