Skip to main content
Goford Semiconductor GT095N10S — Logic ICs

Goford Semiconductor GT095N10S

MPNGT095N10S
Active

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

$0.94Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

GT095N10S Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.6V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs29.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2131 pF @ 50 V