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Goford Semiconductor GT090N06D52 — Logic ICs

Goford Semiconductor GT090N06D52

MPNGT090N06D52
Active

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

$1.28Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

GT090N06D52 Technical Specifications
ParameterValue
FET type2 N-Channel (Dual)
Mounting typeSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power - max62W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerTDFN
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs24nC @ 10V
Input capacitance (Ciss) (Max) @ vds1620pF @ 30V