Goford Semiconductor GT090N06D52
MPNGT090N06D52
Active
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
$1.28Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power - max | 62W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 14A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 1620pF @ 30V |