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Goford Semiconductor GT025N06AM
MPN GT025N06AM
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
N60V,170A,RD<2.5M@10V,VTH1.2V~2.
In Stock: 791 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.70 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$1.70
10+ pcs
$1.53
30+ pcs
$1.39
100+ pcs
$1.26
500+ pcs
$1.17
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[SPEC] Essential Parameters Snapshot Full Specifications (17)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output / Current 60 V
Full Technical Specifications
17 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SGT |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 170A (Tc) |
| Power dissipation | 215W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5119 pF @ 30 V |
Series Sibling Variants
Goford Semiconductor SGT Series Models
Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
GT025N06AM
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