Goford Semiconductor GT025N06AM
MPNGT025N06AM
Active
N60V,170A,RD<2.5M@10V,VTH1.2V~2.
$1.7Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHSRoHS Compliant
SeriesSGT
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SGT |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 170A (Tc) |
| Power dissipation | 215W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5119 pF @ 30 V |