Goford Semiconductor GC20N65T
MPNGC20N65T
Active
N650V,RD(MAX)<170M@10V,VTH2.5V~4
$2.84Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSRoHS non-compliant
SeriesCool MOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Cool MOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 151W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 170mOhm @ 10A, 10V |