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Goford Semiconductor GC11N65D5 — Logic ICs

Goford Semiconductor GC11N65D5

MPNGC11N65D5
Active

N650V, 11A,RD<360M@10V,VTH2.5V~4

$1.73Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

GC11N65D5 Technical Specifications
ParameterValue
SeriesG
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Input capacitance (Ciss) (Max) @ vds901 pF @ 50 V