Goford Semiconductor G900P15D5
MPNG900P15D5
Active
P-150V,-60A,RD(MAX)<80M@-10V,VTH
$1.58Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSRoHS Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 100W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 80mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4050 pF @ 75 V |